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| Title: | Engineering β-Ga2O3 Thin Films: The Role of Substrate in Sol-gel Spin-coating Growth |
| Other Titles: | |
| Authors: | Arslanov A. Botirova N. Eshonkulov G. Murodov J. Nusretov R. Yuldashev Sh. |
| Keywords: | sol-gel method thermal annealing β-Ga2O3 золь-гель метод оксид галлия термический отжиг |
| Issue Date: | 2025 |
| Publisher: | Publisher |
| Citation: | Engineering β-Ga2O3 Thin Films: The Role of Substrate in Sol-gel Spin-coating Growth / N. Botirova, Sh. Yuldashev, G. Eshonkulov, A. Arslanov, J. Murodov, R. Nusretov // Информационные технологии и нанотехнологии (ИТНТ-2025) : материалы XI междунар. конф. и молодеж. шк. (г. Самарканд, Узбекистан, 7-9 окт. 2025 г.) / М-во науки и высш. образования Рос. Федерации, Самар. нац. исслед. ун-т им. С. П. Королева (Самар. ун-т). - Самара : Изд-во Самар. ун-та, 2025. - С. 062182. |
| Abstract: | Gallium oxide (P-Ga2O3) is an emerging ultra-wide band gap semiconductor with potential applications in high-power electronics, optoelectronics, and sensi g devices. The properties of p-Ga2O3 films are significantly influenced by the choice of substrate, which affects the crystalline structure, morphology, electrical characteristics, and over all film quality. |
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| Other Identifiers: | RU\НТБ СГАУ\582104 |
| Appears in Collections: | Информационные технологии и нанотехнологии |
Files in This Item:
| File | Size | Format | |
|---|---|---|---|
| 978-5-7883-2262-9_2025-388-389.pdf | 113.23 kB | Adobe PDF | View/Open |
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