Samara University Repository
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| Title: | InP/InGaAs фотокатод для гибридных фотоприемников ближнего ИК диапазона |
| Other Titles: | InP/InGaAs photocathode for hybrid SWIR photodetectors |
| Authors: | Смирнов, К.Я. Давыдов, В.В. Батов, Ю.В. |
| Issue Date: | 2019 |
| Publisher: | Изд-во «Новая техника» |
| Citation: | Смирнов К.Я. InP/InGaAs фотокатод для гибридных фотоприемников ближнего ИК диапазона / К.Я. Смирнов, В.В. Давыдов, Ю.В. Батов // Сборник трудов ИТНТ-2019 [Текст] : V междунар. конф. и молодеж. шк. "Информ. технологии и нанотехнологии" : 21-24 мая : в 4 т. / Самар. нац.-исслед. ун-т им. С. П. Королева (Самар. ун-т), Ин-т систем. обраб. изобр. РАН-фил. ФНИЦ "Кристаллография и фотоника" РАН ; [под ред. Р. В. Скиданова]. - Самара: Новая техника, 2019. - Т. 1 : Компьютерная оптика и нанофотоника. - 2019. - С. 95-99. |
| Abstract: | В статье описана технология создания фотокатода с тянущим полем на основе гетероструктур InP/InGaAs с квантовой эффективностью на уровне 5% в спектральном диапазоне 0,9-1,7 мкм. Рассмотрен эффект снижения квантовой эффективности фотокатодной структуры при повышении облученности образца. Предложены различные варианты реализации гибридных вакуумных приборов на основе InP/InGaAs фотокатода для специальных задач. The technology of creation the photocathode with quantum efficiency at the level of 5% based on the InP/InGaAs heterostructures is given. The effect of decreasing the quantum efficiency of the photosensitive structure on radiant sensitivity is considered. Several variants of realization of vacuum photoelectronic device with InP/InGaAs photocathode for special purposes are represented. |
| URI: | http://repo.ssau.ru/jspui/handle/123456789/11095 |
| Appears in Collections: | Информационные технологии и нанотехнологии |
| File | Description | Size | Format | |
|---|---|---|---|---|
| paper17.pdf | 460.76 kB | Adobe PDF | View/Open |
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