Effect of Temperature Annealing on Ga2O3 Thin Films Grown by Sol-Gel Method

Abstract

Here were port the growth of β-Ga2O3, thin films on the Si substrate via a low-cost sol-gel spin coating method followed by a post annealing process. The crystalline structure and optical properties of the films were characterized using various techniques, in cluding X-ray diffraction (XRD) and ultra violet-visible spectroscopy. The results showed that the purep-Ga2O3 polycrystalline films would beformed after temperature annealing at 8000C and higher. The optical band gap firstly in creased with annealing temperature and th en it decreased up to 4.87 eV after an nealing at 10000C for 1 hour.