Resolution limits of the dry e-beam etching of resist for nanophotonic structure formation

Abstract

Micro- and nanostructures formation of special well-rounded shape using an e-beam lithography is a huge task. Usually stair-like profile is used instead that complicates the process immensely. The problem can be solved using the dry method of relief formation in some positive resists during electron-beam exposure in vacuum (DEBER method). DEBER method can be used for formation of wide range of structures for nanophotonics and optoelectronics. The structures obtained by the method are presented. Resolution limits of the method are analyzed and the approaches to resolution enhancement are discussed.