Design and simulation of a SOI based mems differential accelerometer

Abstract

In this paper, the design and analysis of a differential MEMS capacitive accelerometer is presented. The device is designed to be compatible for SOI based fabrication process. The outstanding mechanical and electrical properties of silicon on insulator (SOI) wafers make it popular for high-performance MEMS sensors such as accelerometers. The operating range of the designed device is 0-10g with its sense axis in the in-plane direction. The movable comb fingers attached to the proof mass form capacitors with the fixed electrode fingers. The movable and fixed fingers are spaced with unequal gaps to form the differential capacitive sensing configuration. The base capacitance of this configuration is about 0.77pF and the sensitivity in response to acceleration input is about 0.776 fF/g. The resonance frequency of the structure in the sensing mode is found to be 7.138 kHz.