Phase grating patterning by direct laser recording on As2S3-Se nanomultilayers

Abstract

Direct laser recording of surface relief gratings as phase holograms on successive evaporated As2S3 and Se nanomultilayers was studied in this paper. The surface relief gratings patterned on As2S3-Se nanomultilayers were investigated in dependence on polarization states of recording beams. It was shown that phase gratings are formed on the surface of the As2S3-Se nanomultilayers under the two linear polarized beams falling on the sample surface at (+45o)-(- 45o) relative to grating vector and the left-right circular polarizations. The influence of photo-induced mass transport on the surface relief formation process is discussed.