Отрывок: Energy distribution of secondary electrons is somehow described in [17, 18]. The mean energy of “fast” secondary electrons (energy higher than 100 eV) is about 400 eV for primary electron energy of 20 keV [19]. It seems that the number of sec- ondary electrons with energy higher than 1 keV is negli- gible. So, in the worst case the generation of secondary electrons can results in 30-40 nm broadening of trench. a) b) Fig. 5. T...
Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Rogozhin, A. | - |
dc.contributor.author | Bruk, M. | - |
dc.contributor.author | Zhikharev, E. | - |
dc.contributor.author | Sidorov, F. | - |
dc.date.accessioned | 2017-10-25 12:26:47 | - |
dc.date.available | 2017-10-25 12:26:47 | - |
dc.date.issued | 2017-08 | - |
dc.identifier | Dspace\SGAU\20171020\65776 | ru |
dc.identifier.citation | Rogozhin A, Bruk M, Zhikharev E, Sidorov F. Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins. Computer Optics 2016; 41(4): 499-503. | ru |
dc.identifier.uri | https://dx.doi.org/10.18287/2412-6179-2017-41-4-499-503 | - |
dc.identifier.uri | http://repo.ssau.ru/handle/Zhurnal-Komputernaya-optika/Nanophotonic-structure-formation-by-dry-ebeam-etching-of-the-resist-resolution-limitation-origins-65776 | - |
dc.description.abstract | A wide range of structures for nanophotonics and optoelectronics can be formed by dry e-beam etching of the resist (DEBER). High resist sensitivity due to chain depolymerization reaction provides efficient etching with high throughput of the method. The structures obtained by the DEBER in this research are well-rounded diffraction gratings, binary gratings and staircase profiles. The major disadvantage of DEBER is poor lateral resolution, which may be caused by different physical mechanisms. Four groups of possible mechanisms leading to the resolution limitation are determined and the influence of some mechanisms is estimated. | ru |
dc.description.sponsorship | This study was partially supported by the President of the Russian Federation's grant No. MK-3327.2017.9. | ru |
dc.language.iso | en | ru |
dc.publisher | Самарский университет | ru |
dc.relation.ispartofseries | 41;4 | - |
dc.subject | DEBER | ru |
dc.subject | e-beam etching | ru |
dc.subject | nanophotonics | ru |
dc.subject | diffractive optical elements | ru |
dc.subject | diffractive optics | ru |
dc.subject | three-dimensional lithography | ru |
dc.subject | three-dimensional fabrication | ru |
dc.subject | microlithography | ru |
dc.subject | optical design and fabrication | ru |
dc.title | Nanophotonic structure formation by dry e-beam etching of the resist: resolution limitation origins | ru |
dc.type | Article | ru |
dc.textpart | Energy distribution of secondary electrons is somehow described in [17, 18]. The mean energy of “fast” secondary electrons (energy higher than 100 eV) is about 400 eV for primary electron energy of 20 keV [19]. It seems that the number of sec- ondary electrons with energy higher than 1 keV is negli- gible. So, in the worst case the generation of secondary electrons can results in 30-40 nm broadening of trench. a) b) Fig. 5. T... | - |
Располагается в коллекциях: | Журнал "Компьютерная оптика" |
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