Отрывок: 9. From the results, the curves are linear; it may suggest that ohmic conduction by the inci- dence of thermally generated carriers [42]. The electrical conduction process is limited by ther- mally activated carriers, and this process continues in the expectation of the injected free carrier density being comparable with the following two examples. (i) Carrier density produced by heat (ii) The conduction current is primar...
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dc.contributor.authorGurushankar, K.-
dc.contributor.authorGrishina, M.-
dc.contributor.authorGohulkumar, M.-
dc.contributor.authorKannan, K.-
dc.date.accessioned2023-02-21 10:12:14-
dc.date.available2023-02-21 10:12:14-
dc.date.issued2023-02-
dc.identifierDspace\SGAU\20230216\102024ru
dc.identifier.citationGurushankar K, Grishina M, Gohulkumar M, Kannan K. Computational and experimental studies on SnO2 thin films at various temperatures. Computer Optics 2023; 47 (1): 53-61. DOI: 10.18287/2412-6179-CO-1151.ru
dc.identifier.uri10.18287/2412-6179-CO-1151-
dc.identifier.urihttp://repo.ssau.ru/handle/Zhurnal-Komputernaya-optika/Computational-and-experimental-studies-on-SnO2-thin-films-at-various-temperatures-102024-
dc.description.abstractTin oxide (SnO2) thin films was prepared by dip-coating technique at various bath temperatures (313, 333, 353 and 373 K) and annealed at 673 K in this study. And the obtained results were studied and correlated with the computational method. Scanning electron microscopy (SEM) investigation demonstrated that the prepared samples are spherical with agglomeration. The elemental analysis (EDAX) confirms the presence of Sn and O. Further, the SnO2 thin films microstructures are simulated, their thermodynamic and surface properties have been calculated. Micro-Raman spectra were recorded for the prepared samples. Micro-Raman results exhibit the first-order Raman mode E1g (475 cm−1) indicating that the grown SnO2 belongs to the rutile structure. In addition, the envelope method used for studying optical characteristics of the thin films from the transmittance spectra. The semiconducting nature of the films has been noticed from linear I-V characteristics. Furthermore, the electrical conductivity studies suggest that the highest conductivity samples acquire the lowest activation energy and their values are also in the semiconducting range.ru
dc.description.sponsorshipThe work was supported by Act 211 Government of the Russian Federation, contract 02.A03.21.0011 and by the Ministry of Science and Higher Education of Russia (Grant FENU-2020-0019).ru
dc.language.isoenru
dc.publisherСамарский национальный исследовательский университетru
dc.relation.ispartofseries47;1-
dc.subjectSnO2 thin films, dip-coating technique, computational method, thermodynamic and surface characteristics, gibbs free energy and electrical conductivityru
dc.titleComputational and experimental studies on SnO2 thin films at various temperaturesru
dc.typeArticleru
dc.textpart9. From the results, the curves are linear; it may suggest that ohmic conduction by the inci- dence of thermally generated carriers [42]. The electrical conduction process is limited by ther- mally activated carriers, and this process continues in the expectation of the injected free carrier density being comparable with the following two examples. (i) Carrier density produced by heat (ii) The conduction current is primar...-
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