Samara University Repository
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| Title: | Thin films of semiconductors for magneto-operated diodes and memristors |
| Issue Date: | 2017 |
| Publisher: | Новая техника |
| Citation: | Novodvorsky O.A. Thin films of semiconductors for magneto-operated diodes and memristors / O.A. Novodvorsky, L.S. Parshina, A.A. Lotin, V.V. Rylkov, O.D. Khramova, V.A. Mikhalevsky, E.A. Cherebylo, V.Ya. Panchenko // Сборник трудов III международной конференции и молодежной школы «Информационные технологии и нанотехнологии» (ИТНТ-2017) - Самара: Новая техника, 2017. - С. 162-168. |
| Abstract: | The thin films of VO2, TiO2, InSb:Mn, and the heterostructures on their basis have been produced by the PLD method. The memristive effect has been revealed in the heterostructures of Au/VO2/VO2-x/Au, and Au/TiO2/TiO2-x/Au. The value of x was varied during the structure growth by changing the oxygen pressure. The dependence of the I-V curves of the diode heterostructure p-(InSb:Mn)/n-InSb on the magnetic field orientation both in the plane of the structure and perpendicular to it has been revealed. The diode current in the field 0,15T perpendicular to the diode plane decreased almost by a factor of 9, that is indicative of the effect of giant magnetoresistance of the p-(InSb:Mn)/n-InSb diode. |
| URI: | http://repo.ssau.ru/jspui/handle/123456789/13533 |
| Appears in Collections: | Информационные технологии и нанотехнологии |
| File | Description | Size | Format | |
|---|---|---|---|---|
| paper 37_162-168.pdf | Основная статья | 775.48 kB | Adobe PDF | View/Open |
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