Отрывок: Because of elastic scattering of the primary electrons fast electrons can find way to the distant regions of the resist layer. We calculated primary electron trajectories using CASINO program [10] in the PMMA/Si structures (fig. 5) and found that primary electrons can be easily found in 6 μm wide region around the position of e-beam. In the DEBER process resist is extremely sensitive to low doses (it can be seen from the fig. 2) and energy of electrons can be as lo...
Полная запись метаданных
Поле DC Значение Язык
dc.contributor.authorRogozhin, A.-
dc.contributor.authorBruk, M.-
dc.contributor.authorZhikharev, E.-
dc.contributor.authorSidorov, F.-
dc.contributor.authorStreltsov, D.-
dc.date.accessioned2017-05-11 10:45:57-
dc.date.available2017-05-11 10:45:57-
dc.date.issued2017-
dc.identifierDspace\SGAU\20170510\63677ru
dc.identifier.citationA. Rogozhin, M. Bruk, E. Zhikharev, F. Sidorov, D. Streltsov // Сборник трудов III международной конференции и молодежной школы «Информационные технологии и нанотехнологии» (ИТНТ-2017) - Самара: Новая техника, 2017. - С. 339-343.ru
dc.identifier.urihttp://repo.ssau.ru/handle/Informacionnye-tehnologii-i-nanotehnologii/Resolution-limits-of-the-dry-ebeam-etching-of-resist-for-nanophotonic-structure-formation-63677-
dc.description.abstractMicro- and nanostructures formation of special well-rounded shape using an e-beam lithography is a huge task. Usually stair-like profile is used instead that complicates the process immensely. The problem can be solved using the dry method of relief formation in some positive resists during electron-beam exposure in vacuum (DEBER method). DEBER method can be used for formation of wide range of structures for nanophotonics and optoelectronics. The structures obtained by the method are presented. Resolution limits of the method are analyzed and the approaches to resolution enhancement are discussed.ru
dc.description.sponsorshipThe reported study was partially supported by RFBR, research project No. 17-07-01582a. Also this work is supported in part by the grant of the President of Russian Federation No. MK-3327.2017.9.ru
dc.language.isoenru
dc.publisherНовая техникаru
dc.subjectDEBERru
dc.subjectlithographyru
dc.subjecte-beam etchingru
dc.subjectnanophotonicsru
dc.subjectdiffractive optical elementsru
dc.titleResolution limits of the dry e-beam etching of resist for nanophotonic structure formationru
dc.typeArticleru
dc.textpartBecause of elastic scattering of the primary electrons fast electrons can find way to the distant regions of the resist layer. We calculated primary electron trajectories using CASINO program [10] in the PMMA/Si structures (fig. 5) and found that primary electrons can be easily found in 6 μm wide region around the position of e-beam. In the DEBER process resist is extremely sensitive to low doses (it can be seen from the fig. 2) and energy of electrons can be as lo...-
Располагается в коллекциях: Информационные технологии и нанотехнологии

Файлы этого ресурса:
Файл Описание Размер Формат  
paper 72_339-343.pdfОсновная статья913.65 kBAdobe PDFПросмотреть/Открыть
Показать базовое описание ресурса Просмотр статистики
Поделиться:



Все ресурсы в архиве электронных ресурсов защищены авторским правом, все права сохранены.