Отрывок: The material is located on the evaporator 5, which is heated by resistive heating through the current leads 6, located at a distance h (mm) from the substrate holder. The deposition process takes place during the time t (s) and under pressure P (Pa). Figure 3. Scheme of thermal evaporation process in vacuum. By varying the distance from the evaporator ...
Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Isaeva, A.A. | - |
dc.contributor.author | Sidorova, S.V. | - |
dc.date.accessioned | 2019-05-08 11:50:08 | - |
dc.date.available | 2019-05-08 11:50:08 | - |
dc.date.issued | 2019-05 | - |
dc.identifier | Dspace\SGAU\20190430\76264 | ru |
dc.identifier.citation | Isaeva A.A. Mathematical modeling of island films growth initial stages / Isaeva A.A., Sidorova S.V. // Сборник трудов ИТНТ-2019 [Текст]: V междунар. конф. и молодеж. шк. "Информ. технологии и нанотехнологии": 21-24 мая: в 4 т. / Самар. нац.-исслед. ун-т им. С. П. Королева (Самар. ун-т), Ин-т систем. обраб. изобр. РАН-фил. ФНИЦ "Кристаллография и фотоника" РАН; [под ред. В.А. Соболева]. - Самара: Новая техника, 2019. – Т. 3: Математическое моделирование физико-технических процессов и систем. - 2019. - С. 213-217. | ru |
dc.identifier.uri | http://repo.ssau.ru/handle/Informacionnye-tehnologii-i-nanotehnologii/Mathematical-modeling-of-island-films-growth-initial-stages-76264 | - |
dc.description.abstract | Applications of the metal island nanostructures in science and technology are presented. Experimental studies using the UVN-1M vacuum unit were carried out to test the metal thin films formation modes. The growth the initial stages control on the tunnel current change is carried out. Thicknesses of obtained samples were measured using an atomic-force microscope as well as growth of thin films and island nanostructures were simulated. | ru |
dc.language.iso | en | ru |
dc.publisher | Новая техника | ru |
dc.title | Mathematical modeling of island films growth initial stages | ru |
dc.type | Article | ru |
dc.textpart | The material is located on the evaporator 5, which is heated by resistive heating through the current leads 6, located at a distance h (mm) from the substrate holder. The deposition process takes place during the time t (s) and under pressure P (Pa). Figure 3. Scheme of thermal evaporation process in vacuum. By varying the distance from the evaporator ... | - |
Располагается в коллекциях: | Информационные технологии и нанотехнологии |
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paper32.pdf | Основная статья | 290.96 kB | Adobe PDF | Просмотреть/Открыть |
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